Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.
- 120 GB (1 GB=1 Billionbyte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
- Up to 540MB/s sequential read and 520MB/s write
- SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
- 2.5 inch form factor
- 100 x 69.85 x 6.8 mm dimensions